Finfet a selfaligned doublegate mosfet scalable to 20 nm. Exploring the shortchannel characteristics of asymmetric. Gate fet, since the top fin surface contributes to current conduction in the on state. Ga 2o 3 mosfet is reported, showing that the electrical characteristics can be beneficially tuned. But there is little research on asymmetric junctionless dgmosfets. Pdf doublegate mosfets are one possible option to further extend cmos scaling when planar mosfets have reached their scaling limit. Double gate mos free download as powerpoint presentation. In this paper, we present a generic surface potential based current voltage iv model for doped or undoped asymmetric double gate dg mosfet. The model is derived from the 1d poissons equation. The case of asymmetric dg or idg mosfet is more general and more com. Asymmetric gateinduced drain leakage and body leakage in vertical mosfets with reduced parasitic capacitance enrico gili, member,ieee, v. Universal potential model in tied and separated doublegate.
An asymmetric double gate metaloxide semiconductor fieldeffect transistor mosfet includes a first fin formed on a substrate. Ga 2o 3 nanomembrane fet having bottomgate bg mosfet and topgate tg mesfet. The dual gate mosfet can be considered in the same light as the. This paper presents an analytic potential model for longchannel asymmetric double gate adg mosfets. This work presents the drain current model using evanescent mode analysis ema for nanoscale double gate mosfet having gaussian doping profile along the horizontal direction in the channel i. Oct 05, 2004 an asymmetric double gate metaloxide semiconductor fieldeffect transistor mosfet includes a first fin formed on a substrate. Fabrication and characterization of verticaltype, self. The model is developed using the lambert function and a 2dimensional 2d parabolic electro static.
Read a surface potential based drain current model for asymmetric double gate mosfets, solidstate electronics on deepdyve, the largest online rental service for scholarly research. Unified regional surface potential for modeling commongate. Jun 01, 2016 read analytical model for an asymmetric double gate mosfet with gate oxide thickness and flatband voltage variations in the subthreshold region, solidstate electronics on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Shafiqul islam, jannatulafza, and sanjidatarannum department of. Tsividis, operation and modeling of mosfet, wcbmcgrawhill, second. The threshold voltage of a double gate mosfet with polysilicon gate only is not suitable for normal operation. Pdf compact models for asymmetric double gate mosfets. Mar 15, 2018 this paper presents an analytical model of an asymmetric junctionless doublegate asymmetric dgjl silicononnothing metaloxidesemiconductor fieldeffect transistor mosfet. The dual gate mosfet is a useful form of mosfet which can provide some distinct advantages, especially in rf applications. Analytical model for an asymmetric doublegate mosfet with gateoxide thickness and. An analytical compact model for the asym metric lightly doped double gate dg mosfet is presented.
In addition, independent dg mosfet 4tdg mosfet has great advantage to enable the threshold voltage control for the flexible power management. Dc and ac performance analysis of 25 nm symmetricasymmetric. Effect of asymmetric gatedrain overlap on ambipolar behavior. This paper investigates the effect of the asymmetric source and drain geometries of surroundgate vertical mosfets on the drain leakage currents in the offstate region of operation. Modelling and performance analysis of asymmetric double gate stackoxide junctionless fet in subthreshold region md. Additional gate fringing capacitance is less of an issue for the tri. Double gate mosfet has two modes of operation as shown in fig. A multigate device, multigate mosfet or multigate fieldeffect transistor mugfet refers to a mosfet metaloxidesemiconductor fieldeffect transistor that incorporates more than one gate into a. Mosfet, finfet, symmetricasymmetric double gate, ultrathin body, unified regional surface potential 1 introduction with four decades of scaling of conventional bulk and silicononinsulator soi cmos. To remove simultaneously the ambipolar conduction and enhance hf performances, we propose a promising configuration of dgtfet with asymmetric gatedrain overlap asgdo dgtfet. Double gate mosfet dgfets, mos modeling, analytical modeling, compact modeling, drain current model. Solving the 2d poissons equation, the expressions for center potential and threshold voltage are calculated. Symmetric and asymmetric double gate mosfet modeling.
The advantages of double gate dg so1 mosfets over conventional, single gate transistors are described in terms of performance and potential for ultimate scaling. The compact modeling community faces great challenges to model the physical effects due to the coupling of the two gates. Jan 27, 2012 the inner fringing field capacitances are also considered in the model for accurate estimation of the subthreshold surface potential at the two ends of the mosfet. Small signal modeling of scaled doublegate mosfet for ghz. To remove simultaneously the ambipolar conduction and enhance hf performances, we propose a promising configuration of dgtfet with asymmetric gatedrain overlap asgdo dgtfet in which only back gate is overlapped with drain region. This is where things begin to go wrong, because of the misconceptions about what really turns on a. The dg mosfet is recognized to be the most scalable mosfet for its high sces immunity. Drain current and transconductance model for the undoped body asymmetric double gate mosfet. Pdf drain current and transconductance model for the. The model includes core model, intrinsic model short. Symmetric dg mosfet with gate and channel engineering. Understanding the turnon process application note an850. School of electrical and electronic engineering, yonsei university, seoul, republic of korea article info article history. This study is to analyze the changes of tunneling current according to projected range, a variable of gaussian function of channel doping function of asymmetric double gate.
Index termsbandtoband tunneling, double gate dg, gated pin diode, high. This paper presents an analytical model of an asymmetric junctionless doublegate asymmetric dgjl silicononnothing metaloxidesemiconductor fieldeffect transistor mosfet. Regions of operation, ieee southwest symposium mixed. Driving power mosfets in highcurrent, switch mode regulators figure 1. Asymmetric double gate modeling which can be extended for circuits like sram and rf amplifier design. Analytical model for an asymmetric double gate mosfet with gate oxide thickness and. This paper presents an analytical subthreshold surface potential model of novel structures called asymmetric pocket. Analytical model for an asymmetric doublegate mosfet with. The advantages of doublegate dg so1 mosfets over conventional, singlegate transistors are described in terms of performance and potential for ultimate scaling.
Double gate mosfet is one of the key potential devices to allow further extension of cmos technology scaling. Pdf symmetric and asymmetric double gate mosfet modeling. The dual gate mosfet can be considered in the same light as the tetrode vacuum tube or thermionic valve. Modelling and performance analysis of asymmetric double.
Asymmetric mosfet structure with ldd at drain only when symmetric mosfet is further scaled down, it leads to short channel effects which are then overcome by adopting asymmetric. Modelling and performance analysis of asymmetric double gate. Small signal modeling of scaled doublegate mosfet for. Analytic potential model for asymmetricunderlap gateall. The threshold voltage of a doublegate mosfet with polysilicon gate only is not suitable for normal operation. For eight years, our company has been designing and producing the most innovative aeg control systems and mosfets. Mos modeling can be done by either analytical modeling or compact modeling.
Results for the channel potential and current are compared with 2d. Polysilicon or metal ba ckg a t polysilicon or fig. P k sahu, d k behera, jyotismita mishra, symmetric dgmosfet with gate and channel engineering. Effect of spacer dielectric engineering on asymmetric source. Design of high performance sense amplifier using independent gate control in sub50nm doublegate mosfet. Universal potential model in tied and separated doublegate mosfets with consideration of symmetric and asymmetric structure jinwoo han, chungjin kim, and yangkyu choi abstracta universal compact potential model for all types of doublegate mosfets is presented. Compact models of the net charge and channel current of the dg mosfet are derived in section 2. Performance analysis of devices in double gate mosfet. Analysis of harmonic distortion in asymmetric underlap dg. Here, we present a surface potential based compact model for common double gate mosfet inddg along with implementation results. The same model is used to find the characteristic parameters for dual. Comparison of symmetric and asymmetric double gate mosfets. The devices having different spacers are considered, and are compared in terms of analog, rf and circuit performance. Drain current and transconductance model for the undoped body asymmetric doublegate mosfet.
A symmetric double gate sdg with gate workfunction of 250mv above midgap for both front and back gate. This proposed structure of dgtfet removes the tradeoff between ambipolarity and hf performances by taking the merit of gatedrain overlap in terms of. High side mosfet is designed to minimize switching losses. Unified compact model for generic doublegate mosfets.
Compact modeling of asymmetricindependent double gate. Symmetric and asymmetric double gate mosfet modeling vgf vgb toxf toxb ts x source 0,0 y drain l w fig. Although the operation of dg transistor is similar to the conventional mosfet. Projected range dependent tunneling current of asymmetric. Electronic transport in laterally asymmetric channel mosfet for rf analog applications. The model is derived from the 1d poissons equation with all the charge terms included and the channel potential is solved for the asymmetric operation of dg mosfet based on the newtonraphson iterative method. Shafiqul islam, jannatulafza, and sanjidatarannum department of electrical and electronic engineering bangladesh university of engineering and technology dhaka, bangladesh corresponding author. Asymmetrical double gate or allaround gate mosfet devices. The premier quantum mechanical effects which should be included in model development for below. An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric doublegate metaloxidesemiconductor fieldeffect transistor mosfet is presented. To take advantage of the double gate mosfet dgmos architecture with.
Double gate mosfets are one possible option to further extend cmos scaling when planar mosfets have reached their scaling limit. Double gate mosfet operation the voltage applied on the gate terminals controls theelectric field, determining the amount of current flow through the channel. Therefore the asymmetric gate underlap design gaa mosfets may have better performances in reducing sce in large v ds. Why should you choose gate while upgrading your gun. These nonselfaligned dg devices, which ensure gate overlap by using unequal gates 4. The peculiarity of dgmosfets is that the top and bottom gates are biased simultaneously to establish equal surface potentials. Gate fet does not require a highly selective gate etch, due to the protective dielectric hard mask. A new dualmaterial doublegate dmdg nanoscale soi mosfet. Driving the mosfet the low onresistance and high current carrying capability of power mosfets. Pdf an analytical compact model for the asymmetric lightly doped double gate dg mosfet is presented. In this work the symmetric and asymmetric doublegate mosfets are. Symmetric dgmosfet with gate and channel engineering. Double gate mos devices with lightlydoped ultrathin silicon layers utdg are very. Design of 45 nm fully depleted double gate soi mosfet.
In this paper, we focus on the influence of highk dielectric as a spacer material on asymmetric source underlapped double gate mosfet with gate stack asudggs mosfet. Compact modeling of double gate mosfet for ic design. The most common mode of operation is to switch both. Top and bottom gate oxide thicknesses dependent subthreshold. Lowpower tunable analog circuit blocks based on nanoscale doublegate mosfets savas kaya, senior member. Read analysis of harmonic distortion in asymmetric underlap dgmosfet with high k spacer, microelectronics reliability on deepdyve, the largest online rental service for scholarly. Mosfet, finfet, symmetric asymmetric double gate, ultrathin body, unified regional surface potential 1 introduction with four decades of scaling of conventional bulk and silicononinsulator soi cmos technologies, nonclassical mosfet structures have been emerging, ranging from earlier planar partiallydepleted pd or fully. The asymmetry is due to a difference in the work functions of the two gates. Based on the delta structure 10, after reduction of the vertical feature height, the gatechannelgate stacked structure is realized by a quasi planar. Compact modeling effort for mugfet started in late nineties with planar double gate mosfetdgfet,as it is the simplest structure that one can conceive for mugfet devices. The 2d poissons equation has been solved by using parabolic potential approximation method to obtain the 2d channel potential function of the device.
The premier quantum mechanical effects which should be included in model development for below 22nm devices are listed. Asymmetric gateinduced drain leakage and body leakage in. A mosfet transistor, in which source and drain regions are formed at a certain distance away from each other in a surface area of a semiconductor substrate having a first conductivity type, and a gate. An analytic model for channel potential and subthreshold. The junctionbased double gate dg mosfet structure has been investigated with symmetric top and bottom gates, and many studies have also been conducted on the asymmetric structure in the junctionbased mosfet 912. A simple, yet efficient twodimensional 2d model for the dopingdependent subthreshold swing characteristics of symmetric double gate dg mosfets has been presented. The proposal model has a good agreement with 3d numerical simulation.
A surface potential based drain current model for asymmetric. The junctionbased double gate dg mosfet structure has been investigated with symmetric top and bottom gates, and many studies have also been conducted on the asymmetric structure in the junction. Aug 01, 2010 read chargebased model for symmetric double gate mosfets with inclusion of channel doping effect, microelectronics reliability on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Pdf electronic transport in laterally asymmetric channel. Symmetric and asymmetric double gate mosfet modeling article pdf available in journal of semiconductor technology and science 95 december 2009 with 292 reads how we measure reads.
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